Reversible metallization and carrier transport behavior of In2S3 under high pressure
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چکیده
منابع مشابه
HIGH PRESSURE BEHAVIOR OF KCl: STRUCTURAL AND ELECTRONIC PROPERTIES
The high pressure behavior of the structural and electronic properties of KC1 is studied with use of the density functional pseudopotential method within local-density approximation. Atzero pressure, the rocksalt phase is found to be lower in energy than CsCl structure. However, we predict a phase transition into CsCI structure at a pressure of about 1.5 GPa. The calculated ground state pro...
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در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...
15 صفحه اولPressure-induced metallization of silane.
There is a great interest in electronic transitions in hydrogen-rich materials under extreme conditions. It has been recently suggested that the group IVa hydrides such as methane (CH(4)), silane (SiH(4)), and germane (GeH(4)) become metallic at far lower pressures than pure hydrogen at equivalent densities because the hydrogen is chemically compressed in group IVa hydride compounds. Here we re...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2018
ISSN: 2158-3226
DOI: 10.1063/1.5054752